| http://www.w3.org/ns/prov#value | - r deposition and method of forming capacitor of semiconductor device using the sameUS7429402Dec 10, 2004Sep 30, 2008Applied Materials, Inc.Depositing a barrier layer on the substrate, such as a titanium or tantalum containing barrier layer and depositing a ruthenium layer on the barrier layer; depositing a tungsten nucleation layer on the ruthenium layer and depositing a tungsten bulk layer on the
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