| http://www.w3.org/ns/prov#value | - Processing, including the forming of contacts and interconnects, is completed at block 64. [0029] While the particular METHOD FOR FORMING SUPER-STEEP RETROGRADED CHANNEL (SSRC) FOR CMOS TRANSISTOR USING RAPID LASER ANNEALING TO REDUCE THERMAL BUDGET as herein shown and described in detail is fully capable of attaining the above-described objects of the invention, it is to be understood that it is
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