| http://www.w3.org/ns/prov#value | - A relaxed Aluminum-Gallium-Nitride (AlGaN) template for optoelectronic device comprising: a base structure having a substantially planar surface, the base structureconsisting essentially of one selected from a group including Silicon and Silicon Carbide; a nucleation layer disposed on the planar surface of the base structure, the nucleation layer consisting of a plurality of crystal grains, each c
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