| http://www.w3.org/ns/prov#value | - Briefly, the preferred embodiment of the present invention is a method for selectively removing oxidized organometallic residues, oxidized organosilicon residues, native oxides, and damages oxides created in plasma-etching through emersion of plasma-etched silicon wafers in a solution of anhydrous ammonium fluoride and a polyhydric alcohol, which is substantially free of hydrogen fluoride and wate
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