| http://www.w3.org/ns/prov#value | - rbon fluoride gas, Cn F2n+2, wherein n is an integer, and an inert gas, said gas mixture comprising a gas mixture ratio of carbon fluoride gas/inert gas in the range from about 2%-20% to about 70%-95% with a corresponding gap width in the range from about 15 mm to about 50 mm; placing the semiconductor wafer between said electrodes and in a plasma generated by the system producing a high volume of
|
