| http://www.w3.org/ns/prov#value | - Various modifications may be applied to the process described above, including but not limited to, forming other types of heterostructures for non-silicon devices, such as heterostructures for non-silicon electronic devices (e.g., HEMTs, HBTs, MESFETs) and/or optoelectronic devices (photodetectors, laser diodes), as shall be described further below.
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