PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • However, the use of some sort of wet or isotropic etch will form the oval trench 522 in FIGS. 28-29 which will enhance fringe capacitance protection using the low-K dielectric process of FIG. 30-31.
http://www.w3.org/ns/prov#wasQuotedFrom
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