| http://www.w3.org/ns/prov#value | - The present embodiment adopts the present invention to a method for producing an epitaxial film for forming a device such as a field effect transistor (MOSFET or the like), a junction field effect transistor (JFET), or a Schottky barrier diode on a silicon carbide single crystal substrate (SiC single crystal substrate) which is produced by, for example, sublimation.
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