| http://www.w3.org/ns/prov#value | - Hence, by application of a non-selective film forming method to the next deposition step, Al or a metal film composed mainly of Al can be also formed on the Al film selectively deposited as described above and SiO2, etc. as the insulating film, whereby a preferable metal film having high usability for general purpose as the wiring of semiconductor device can be obtained.
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