| http://www.w3.org/ns/prov#value | - According to an embodiment of the present invention, nitrogen-rich silicon nitride sidewall spacers are formed by supplying SiH4 at a flow rate of about 200 sccm to about 450 sccm, such as about 250 sccm to about 400 sccm, e.g., about 325 sccm.
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