| http://www.w3.org/ns/prov#value | - hird substrate is dissolved by soaking into a container which a mixed solution of hydrofluoric acid (HF) and sulfuric acid (H2SO4) is in. [0141] In this way, a semiconductor device comprising the layer 11 including an element, the binding material 12, the etching stopper film 14, the binding material 51, and the etching stopper film 52 is completed on the first substrate 10. [0142] Moreover, layer
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