| http://www.w3.org/ns/prov#value | - The present invention is a method for depositing a silicon carbide film having a low hydrogen concentration onto a substrate in a CVD chamber, comprising the steps of providing a silicon source, a carbon source, and a noble gas in a reaction zone containing a substrate, and reacting the silicon source and the carbon source in the presence of a plasma to deposit a silicon carbide film on the substr
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