| http://www.w3.org/ns/prov#value | - Thus the second embodiment enhances the productivity of the semiconductor device and reduces its manufacturing cost. [0111] As shown in FIG. 19, a metal is deposited on the silicon single-crystal layer 120 to form the silicide layer 130 in the same manner as the first embodiment. [0112] Through further steps, including the step of forming the contact and the step of forming the interconnections (n
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