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  • Thus, there is obtained a structural body comprising the above assembled body covered by the Si.sub.3 N.sub.4layer 85 except the surface of the porous silicon base member 81 as shown in FIG. 13(b).Then, the entire porous silicon base member 81 is removed by means of a selective etching method using an etchant such as an aqueous solution of potassium hydroxide so that the entire single-crystal sili
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