| http://www.w3.org/ns/prov#value | - The latter circumstance is nearly always topical in matrix-addressable ferroelectric memories where via connections of metal shall be formed in the global thin film of memory material in order to obtain a connection with e.g. circuitry for driving, control and error correction provided in the substrate and usually realized in CMOS technology, as will be the case with so-called hybrid polymer memor
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