| http://www.w3.org/ns/prov#value | - he light-emitting semiconductor device 100 or 200 in the present invention, which has the positive electrode 120 made of metal layers comprising at least one of silver (Ag), rhodium (Rh), ruthenium (Ru), platinum (Pt), palladium (Pd), and an alloy including at least one of these metals, is improved by about 10% to 50% compared with the light-emitting semiconductor device 400 of prior arts which is
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