| http://www.w3.org/ns/prov#value | - The In content of the third layer 6 and the first layer 8 is set to be equal. [0054] The epitaxial growth method as used in the present specification is a method for growing a crystalline film on a substrate, and it includes VPE (Vapor Phase Epitaxial) method, CVD (Chemical Vapor Deposition) method, MOVPE (Metal Organic Vapor Phase Epitaxial) method, MOCVD (Metal Oxide Chemical Vapor Deposition) m
|
