| http://www.w3.org/ns/prov#value | - The multiprocessing methodology of claim 1, wherein one of the process steps in the sequence is a pre-cleaning process comprising the steps:setting the ambient temperature for the wafer in a range not substantially exceeding 850??? C.; and contacting the device with a dry cleaning mixture of hydrogen (H2) gas and germane (GeH4) gas, such that the germane:hydrogen flow ratio is less than about 0.6
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