| http://www.w3.org/ns/prov#value | - The present invention relates in general to the field of semiconductor memories, particularly but not limitatively to non-volatile memories such as ROMs, EPROMs, EEPROMs and Flash EPROMs or EEPROMs. More specifically, the invention concerns a sensing circuit for sensing the information stored in memory cells, and more particularly to a sensing circuit adapted to the sensing of multi-level memory c
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