| http://www.w3.org/ns/prov#value | - The TFTs using the silicon oxide film as the gate insulator, however, suffer problems such as the leak current ascribed to the pinholes in the gate insulator film, limits in increasing the film thickness (the capacity of a gate insulator depends on the film thickness and permittivity), instability in the required various properties as an insulator film due to the lack of density (that is, the film
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