| http://www.w3.org/ns/prov#value | - Where by the element fabrication process is completed.As apparent from the foregoing, the illustrative embodiment has some features which follow.(i) As shown in FIG. 3, the up-drain MOSFET is arranged such that the p-type base region (base region of second conductivity type) 117 is formed at a top surface portion of the a type well layer (surface-side semiconductor layer) 106 in such a manner as t
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