| http://www.w3.org/ns/prov#value | - he p-well region 508 is formed within the p-well region 560, the n+ source region 509 becomes higher in impurity concentration than that of the third embodiment stated above, thus further improving the surge withstand rating.Fifth EmbodimentA fifth embodiment will next be explained mainly as to its difference from the third embodiment discussed previously.See FIG. 58, which shows a MOSFET of this
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