| http://www.w3.org/ns/prov#value | - The present invention was devised on the basis of these findings and is specifically practiced as follows: [0015] The first pattern formation method of this invention includes the steps of forming a resist film; performing pattern exposure by selectively irradiating the resist film with exposing light while supplying, onto the resist film, a nonaqueous solution including water; and forming a resis
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