| http://www.w3.org/ns/prov#value | - The second protective insulating layer 18 comprising an oxide of Si (mainly SiO2) is disposed on the entire surface of the wafer except for a portion for dividing them into chips. [0133] Then, the second protective insulating layer 18 having two openings 18 a is constructed by lift-off of the resist, as shown in FIG. 3D. The region sandwiched by the openings 18 a of the second protective insulatin
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