| http://www.w3.org/ns/prov#value | - BACKGROUND OF THE INVENTION [0001] The present invention relates to a method for manufacturing a semiconductor device such as diode, transistor, thyristor, insulated gate bipolar transistor (IGBT), MOSFET, and the like, having high speed switching characteristics as well as high electric characteristics. [0002] In order to obtain high speed switching response characteristics with a semiconductor d
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