| http://www.w3.org/ns/prov#value | - The chamber 200 as shown and described in reference to FIGS. 2-9 may be used to form any suitable material, such as aluminum oxide, other metal oxides, tantalum nitride, tantalum, tantalum silicon nitride, copper, copper aluminum, titanium nitride, titanium, titanium silicon nitride, tungsten nitride, tungsten, tungsten silicon nitride, organosilanes or organosiloxanes, other refractory metals, ot
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