| http://www.w3.org/ns/prov#value | - This example is a case in which the lateral growth method in Example 7 was changed to a method employing OCD. That is, the silicon oxide film 205 of thickness 500 to 2000 ???, e.g. 1000 ??? which was continuously formed subsequent to the formation of the 500 ??? intrinsic (type I) amorphous silicon film 203 was omitted, and instead a nickel-added SOG film, in this case an OCD Type-2 non-doped mate
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