| http://www.w3.org/ns/prov#value | - The invention provides a method of fabricating a integrated circuit dynamic random access memory (DRAM), the DRAM comprising a semiconducting wafer having a semiconducting substrate, a plurality of transistors formed on the substrate, each transistor including a gate conducting layer, a capacitor formed on the substrate and having a capacitor first conducting layer, a capacitor dielectric layer, a
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