| http://www.w3.org/ns/prov#value | - he FD region 111 and the source region and/or the drain region, under which the potential barriers 105 are provided, of each transistor. [0063] In addition, this arrangement is preferable because providing more potential barriers 105 under the source and drain regions of the second transistors provides a structure in which signal charge is less likely to be absorbed by regions other than the photo
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