| http://www.w3.org/ns/prov#value | - After formation of strained layer 305, a gate dielectric 405 and gate electrode 410 may be formed on the portion of fin 205 not covered by source 210 and drain 215, as shown in FIGS. 4A and 4B. The gate dielectric 405 may include a thin layer of dielectric material, such as SiO, SiO2, SiN, SiON, HFO2, ZrO2, Al2O3, HFSiO(x) ZnS, MgF2, or other dielectric materials.
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