| http://www.w3.org/ns/prov#value | - That is, there is a problem that a current flow is continuously formed between the source and the drain in the channel forming region due to diffusion of impurities from the source and the drain to the channel formingregion.SUMMARY OF THE INVENTIONAn object of the present invention is to provide a semiconductor device comprising an insulated gate FET free from problems such as the leakage of rever
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