| http://www.w3.org/ns/prov#value | - The insulating layer 133 can be formed to have either a single layer or a stacked structure by a CVD method, a sputtering method, or the like, using an insulating layer containing oxygen or nitrogen such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy where x>y>0), or silicon nitride oxide (SiNxOy where x>y>0); a film containing carbon such as DLC (diamond-like carbon);
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