| http://www.w3.org/ns/prov#value | - These and other objects of the invention are obtained by a bipolar transistor structure having single crystal emitter, base and collector regions, a first emitter contact layer of a higher bandgap than the single crystal and polycrystalline forms of the semiconductor material which forms the emitter and of the same conductivity type as the emitter, and a second emitter contact layer of a substanti
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