| http://www.w3.org/ns/prov#value | - The fabrication method of the present invention is a method for fabricating a semiconductor device provided with a partially-depleted SOI MOSFET and fully-depleted SOI MOSFET on the same substrate, and includes: a step for forming a fully-depleted SOI MOSFET formation region and a partially-depleted SOI MOSFET formation region by isolating elements in the SOI layer of an SOI substrate that include
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