| http://www.w3.org/ns/prov#value | - The method of claim 5, wherein in the step of forming the via hole, a first of the at least two etching gases includes hydrogen, fluorine and carbon and a gas not including oxygen for opening an upper portion of the via hole over the top of the first metallic wiring, and a second of the at least two etching gases includes hydrogen, fluorine and carbon and a gas including oxygen for opening the low
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