| http://www.w3.org/ns/prov#value | - The preferred embodiment of the present invention is a method of forming an MRAM cell (or an array of such cells) having a magnetic tunnel junction (MTJ) cell element, so that the cell topography is flat and the distance between the word line and the free layer within the element, the distance between the bit line and the free layer within the cell element or the distances between both the word an
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