| http://www.w3.org/ns/prov#value | - The through holes 49 are formed in the nearest vicinities of the memory cell sub-arrays in such a manner as to connect, on the one hand, the power supply lines 19 and the grounding lines 20 arranged on the sense-amplifier forming regions 48 a, 48 b, and 48 d, 48 e formed adjacent to these memory cell sub-arrays 46 a and 46 b, respectively, and, on the other hand, the power supply lines (including
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