| http://www.w3.org/ns/prov#value | - The porous layer 112 formed by this step is a layer having a fragile structure and functions as a separation layer later in the separation step. [0132] Then, the single-crystal silicon layer 113 is epitaxially grown on the porous layer 112 by CVD. [0133] The growth conditions of the single-crystal silicon layer are as follows. [0134] Carrier Gas: H2 [0135] The flow rate of hydrogen is preferably 1
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