| http://www.w3.org/ns/prov#value | - When manufacturing the light emitting device of this embodiment, for example, the semiconductor light emitting element 11 including gallium nitride semiconductor in the light emitting layer is die-bonded on the bottom of the case 10 by using a resin such as epoxy resin, and the electrodes of the semiconductor light emitting element 11 and the electrodes 12, 12 provided on the bottom of the case 10
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