| http://www.w3.org/ns/prov#value | - The polishing method of the present invention is a method which comprises polishing a semiconductor device comprising at least copper, a tantalum-containing compound and a Low-k material, on a substrate, with the above-mentioned polishing composition, whereby polishing of the copper, the tantalum-containing compound and the Low-k material can be carried out at a substantially same high stock remov
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