| http://www.w3.org/ns/prov#value | - DETAILED DESCRIPTION OF THE INVENTION [0025] The present invention is a particularly useful method of curing a spin-on low k dielectric layer and altering its properties and composition for improved performance as an interlevel dielectric layer or an intrametal dielectric layer in an interconnect structure. [0026] Referring to FIG. 1, a continuous loop system is shown in which supercritical CO2 an
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