| http://www.w3.org/ns/prov#value | - The semiconductor device includes a semiconductor substrate in which an active region and an isolation region including a trench are formed, a spacer formed on both sidewalls of the trench, a channel stop impurity region which is self-aligned by the spacer and locally formed only at the lower portion of the isolation region, an isolation insulating layer in which the trench is buried, and a gate p
|
