| http://www.w3.org/ns/prov#value | - Thus, in particular embodiments, a thin film containing noble metal is selectively deposited on a first surface comprising a high-k material while avoiding deposition on a second surface comprising a lower k insulator such as a silicon oxide, silicon nitride, silicon oxynitride, fluorinated silica glass (FSG), carbon doped silicon oxide (SiOC) or material containing more than 50% of silicon oxide.
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