| http://www.w3.org/ns/prov#value | - The insulating layer 828 which is in contact with each side surface of the conductive layers 824 and 826 is formed as follows; an insulating layer having a single layer structure or a stacked-layer structure is formed by a CVD method or a sputtering method using an inorganic material such as silicon oxide, silicon nitride, silicon oxynitride, or silicon nitride oxide, or an organic material such a
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