PropertyValue
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  • FIELD OF THE INVENTIONThis invention generally relates to programmable non-volatile memory (PNVM) devices such as EEPROM and Flash memory devices and more particularly to a PNVM device and method for forming the same including an improved process flow.BACKGROUND OF THE INVENTIONIn flash memory and EEPROM (Electrically Erasable Programmable Read Only Memory) devices, a floating gate transistor and
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