| http://www.w3.org/ns/prov#value | - BACKGROUND OF THE INVENTION [0001] The present invention relates to a semiconductor device, particularly to a semiconductor device equipped with MOS transistors. [0002] Silicon oxide is a material having excellent insulating properties, featuring a bandgap of as large as 8.0 eV. Thanks to its high insulating performance, this material has been dominantly used for insulating films such as gate insu
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