| http://www.w3.org/ns/prov#value | - There is further provided a plasma-enhanced chemical vapor deposition apparatus including (a) a reaction chamber into which a process gas is introduced and from which an exhausted gas is discharged, (b) a susceptor having a first region on which a semiconductor substrate is to be placed and a second region other than the first region, (c) an electrode located in facing relation with the susceptor
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