| http://www.w3.org/ns/prov#value | - The polishing method of the present invention is a method for polishing a semiconductor device having at least a layer made of copper and a layer made of a tantalum-containing compound, on a substrate, with the above-mentioned polishing composition, whereby in its CMP process, the stock removal rate of the copper layer will be high, the stock removal rate of the tantalum-containing compound layer
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