| http://www.w3.org/ns/prov#value | - The difference between the process in EXAMPLE 1 and the present process is that the process of EXAMPLE 1 comprises a step of ion-doping the impurities such as carbon, nitrogen, and oxygen to the semiconductor layer 2 and 2??? using gate electrodes 4 and 4??? as well as the resist films thereon as the masks (see FIGS. 6(B) and 6 (C)), whereas the process of the present EXAMPLE comprises ion-doping
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