| http://www.w3.org/ns/prov#value | - The method comprises providing a copper structure with an exposed first surface in a semiconductor device, exposing the first surface of the copper structure to a plasma-free silane gas treatment for a short time, such as about 40 seconds or less, to form a corrosion protection layer, for example, a semiconductor or a semiconductor-copper alloy, on the exposed first surface of the copper structure
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